Amplifiers dedicated for large area SiC photodiodes

P. Doroz; M. Duk; M. L. Korwin-Pawlowski; M. Borecki

doi:10.1117/12.2248512

28 September 2016 Amplifiers dedicated for large area SiC photodiodes

P. Doroz, M. Duk, M. L. Korwin-Pawlowski, M. Borecki

Proceedings Volume 10031, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2016; 100311R (2016) https://doi.org/10.1117/12.2248512
Event: Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2016, 2016, Wilga, Poland

Abstract

Large area SiC photodiodes find applications in optoelectronic sensors working at special conditions. These conditions include detection of UV radiation in harsh environment. Moreover, the mentioned sensors have to be selective and resistant to unwanted signals. For this purpose, the modulation of light at source unit and the rejection of constant current and low frequency component of signal at detector unit are used. The popular frequency used for modulation in such sensor is 1kHz. The large area photodiodes are characterized by a large capacitance and low shunt resistance that varies with polarization of the photodiode and can significantly modify the conditions of signal pre-amplification. In this paper two pre-amplifiers topology are analyzed: the transimpedance amplifier and the non-inverting voltage to voltage amplifier with negative feedback. The feedback loops of both pre-amplifiers are equipped with elements used for initial constant current and low frequency signals rejections. Both circuits are analyzed and compared using simulation and experimental approaches.

Citation Download Citation

P. Doroz, M. Duk, M. L. Korwin-Pawlowski, and M. Borecki "Amplifiers dedicated for large area SiC photodiodes", Proc. SPIE 10031, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2016, 100311R (28 September 2016); https://doi.org/10.1117/12.2248512

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