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19 October 2016 Study on CCD detector irradiated by multi-pulse laser
Mingxin Li, Guangyong Jin, Yong Tan
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Proceedings Volume 10152, High Power Lasers, High Energy Lasers, and Silicon-based Photonic Integration; 1015207 (2016) https://doi.org/10.1117/12.2243823
Event: International Symposium on Optoelectronic Technology and Application 2016, 2016, Beijing, China
Abstract
Using millisecond pulse laser irradiating CCD detector, the interacting process between millisecond pulse laser and CCD detector was studied, the forming reason of different damage effects was analyzed, the damage process and damage laws of CCD detector under millisecond pulse laser were revealed. The results show that: with the same laser energy density, the maximum temperature and the damaged area increased with the increase of pulse number; with the same pulse number, the range of the noise widened with the increase of laser energy density, and the vertical shift register impedance values decreased with the increase of laser energy density; the microlens layer on the damaged edge of CCD detector occurred stress damage.
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Mingxin Li, Guangyong Jin, and Yong Tan "Study on CCD detector irradiated by multi-pulse laser", Proc. SPIE 10152, High Power Lasers, High Energy Lasers, and Silicon-based Photonic Integration, 1015207 (19 October 2016); https://doi.org/10.1117/12.2243823
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KEYWORDS
CCD image sensors
Charge-coupled devices
Sensors
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