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1 January 1994 Reticle variation influence on manufacturing line and wafer device performance
John L. Nistler, Kyle Spurlock
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Proceedings Volume 10273, 64-to 256-Megabit Reticle Generation: Technology Requirements and Approaches: A Critical Review; 1027308 (1994) https://doi.org/10.1117/12.177440
Event: 13th Annual BACUS Symposium on Photomask Technology and Management, 1993, Santa Clara, CA, United States
Abstract
Cost effective manufacturing of devices at 0.5, 0.35 and 0.25μm geometries will be highly dependent on a companys’ ability to obtain an economic return on investment. The high capital investment in equipment and facilities, not to mention the related chemical and wafer costs, for producing 200mm silicon wafers requires aspects of wafer processing to be tightly controlled. Reduction in errors and enhanced yield management requires early correction or avoidance of reticle problems. It is becoming increasingly important to recognize and track all pertinent factors impacting both the technical and financial viability of a wafer manufacturing fabrication area. Reticle related effects on wafer manufacturing can be costly and affect the total quality perceived by the device customer.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
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John L. Nistler and Kyle Spurlock "Reticle variation influence on manufacturing line and wafer device performance", Proc. SPIE 10273, 64-to 256-Megabit Reticle Generation: Technology Requirements and Approaches: A Critical Review, 1027308 (1 January 1994); https://doi.org/10.1117/12.177440
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KEYWORDS
Semiconducting wafers
Reticles
Manufacturing
Wafer manufacturing
Silicon
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