PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The understanding of the nucleation stage of thin film growth is a key element of the optimization of synthesis parameters in order to obtain high-quality optical coatings with predetermined characteristics. The fabrication of advanced coatings, often consisting of complex non-quarter wave and/or metal dielectric stacks, requires new and more powerful in situ monitoring techniques compared to conventional reflectometry and transmission, or quartz crystal microbalance measurements. We describe the use of in situ real-time spectroscopic ellipsometry (RTSE) for the development of optical materials and for the control of the fabrication of homogeneous and inhomogeneous optical filters. Examples include materials such as Ti02, Si02 and SiNx prepared by plasma-enhanced chemical vapor deposition (PECVD).
Aram Amassian
"Analysis and control of optical film growth by in situ real-time spectroscopic ellipsometry", Proc. SPIE 10313, Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging, 103134U (29 August 2017); https://doi.org/10.1117/12.2283970
ACCESS THE FULL ARTICLE
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
Aram Amassian, "Analysis and control of optical film growth by in situ real-time spectroscopic ellipsometry," Proc. SPIE 10313, Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging, 103134U (29 August 2017); https://doi.org/10.1117/12.2283970