Developments in AlGaN and UV-C LEDs grown on SiC

Burhan SaifAddin; Christian J. Zollner; Abdullah Almogbel; Humberto Foronda; Feng Wu; Abdulrahman Albadri; Ahmed Al Yamani; Michael Iza; Shuji Nakamura; Steven P. DenBaars; James S. Speck

doi:10.1117/12.2317660

15 February 2018 Developments in AlGaN and UV-C LEDs grown on SiC

Burhan SaifAddin, Christian J. Zollner, Abdullah Almogbel, Humberto Foronda, Feng Wu, Abdulrahman Albadri, Ahmed Al Yamani, Michael Iza, Shuji Nakamura, Steven P. DenBaars, James S. Speck

Author Affiliations +

Proceedings Volume 10554, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII; 105541E (2018) https://doi.org/10.1117/12.2317660
Event: SPIE OPTO, 2018, San Francisco, California, United States

Abstract

AlGaN-based UV-C LEDs (260-300 nm) remain inefficient compared to InGaN visible LEDs due to optically absorptive layers limiting light extraction, optical polarization, and poor material quality. Sapphire, the most popular substrate material, is transparent and inexpensive but has many disadvantages in material quality and device performance. In contrast, SiC has small lattice mismatch with AlN (~1%), similar crystal structure, more chemically stable and contains no oxygen, which degrades the IQE and compensates holes. We report low threading dislocations density (TDD) AlN on SiC (TDD < 7x10⁸cm^-2) by metalorganic chemical vapor deposition (MOCVD). We demonstrate innovative thin-film flipchip (TFFC) LEDs with 7.8 mW at 95 mA at 278.5 nm grown on AlN/SiC with TDD~1x10⁹ cm^-2. (Respectively, EQE and WPE are 1.8% and 0.6%.) We also demonstrate that KOH roughening does not impact the IV voltage of TFFC LED. KOH roughening enhanced the light extraction efficiency (LEE) by 100% and ~180% for UV LEDs with 10 nm p-GaN and 5 nm p-GaN, respectively.

Citation Download Citation

Burhan SaifAddin, Christian J. Zollner, Abdullah Almogbel, Humberto Foronda, Feng Wu, Abdulrahman Albadri, Ahmed Al Yamani, Michael Iza, Shuji Nakamura, Steven P. DenBaars, and James S. Speck "Developments in AlGaN and UV-C LEDs grown on SiC", Proc. SPIE 10554, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII, 105541E (15 February 2018); https://doi.org/10.1117/12.2317660

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available