Helium ion active hybrid non-chemically amplified resist (n-CAR) for sub-10 nm patterning applications

Satinder K. Sharma; Pulikanti Guruprasad Reddy; Mohamad Ghulam Moinuddin; Subrata Ghosh; Chullikkattil P. Pradeep; Kenneth E. Gonsalves

doi:10.1117/12.2297537

19 March 2018 Helium ion active hybrid non-chemically amplified resist (n-CAR) for sub-10 nm patterning applications

Satinder K. Sharma, Pulikanti Guruprasad Reddy, Mohamad Ghulam Moinuddin, Subrata Ghosh, Chullikkattil P. Pradeep, Kenneth E. Gonsalves

Author Affiliations +

Proceedings Volume 10584, Novel Patterning Technologies 2018; 1058409 (2018) https://doi.org/10.1117/12.2297537
Event: SPIE Advanced Lithography, 2018, San Jose, California, United States

Abstract

Patterning of the resist features down to 10 nm node is crucial for futuristic integrated circuits (ICs) technology advancements. In this regard, we design and developed a novel hybrid non-chemically amplified resist (n-CAR) i.e. MAPDST-co-ADSM (where MAPDST = (4-(methacryloyloxy)phenyl) dimethylsulfonium trifluoromethanesulfonate and ADSM = (acetyldibutylstannyl methacrylate)) for high-resolution Helium Ion (He⁺) Beam Lithography (HIBL) studies. The developed resist exhibits the high sensitivity toward Helium ion radiation and patterned sub-15 nm features at the dose ∼50 μC/cm² onto negative tone resist formulation. In order to recognize the critical dimension (CD), the resist thin films were analyzed for single pixel exposure dose analysis at He⁺ exposure dose ranging from ∼30 pC/cm to ∼100 pC/cm. These investigations apparently reveal that 10 nm single pixel line features of the MAPDST-co-ADSM resist is patterned with the dose ∼50.48 pC/cm. The improved patterning resolution of the resist down to 10 nm is due to the inclusion of hybrid tin sensitizer in the resist structures. The MAPDST-co-ADSM showed coherent line edge roughness (LER) and line width roughness (LWR) values for 15 nm lines features as ∼1.67±0.27 nm and ∼2.20 nm respectively.

Monte Carlo-based simulation technique is a standard method for statistical analysis and modelling of stochastic processes; such as noise in circuits, carrier transport and study of ion implantation/interaction/trajectory on materials for integrated circuits. Thus Monte Carlo ion trajectory simulation for MAPDST-co-ADSM resist formulation showed that the negligible (∼0.5%) target damage and recoil generation (atom displacement) of total energy delivered to the system (MAPDST-co-ADSM/Si) in novel HIBL exposure due to much larger stopping power of He⁺ ion and low proximity effect.

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Satinder K. Sharma, Pulikanti Guruprasad Reddy, Mohamad Ghulam Moinuddin, Subrata Ghosh, Chullikkattil P. Pradeep, and Kenneth E. Gonsalves "Helium ion active hybrid non-chemically amplified resist (n-CAR) for sub-10 nm patterning applications", Proc. SPIE 10584, Novel Patterning Technologies 2018, 1058409 (19 March 2018); https://doi.org/10.1117/12.2297537

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