Geometry-based across wafer process control in a dual damascene scenario

Gerd Krause; Detlef Hofmann; Boris Habets; Stefan Buhl; Manuela Gutsch; Alberto Lopez-Gomez; Xaver Thrun

doi:10.1117/12.2302972

13 March 2018 Geometry-based across wafer process control in a dual damascene scenario

Gerd Krause, Detlef Hofmann, Boris Habets, Stefan Buhl, Manuela Gutsch, Alberto Lopez-Gomez, Xaver Thrun

Proceedings Volume 10585, Metrology, Inspection, and Process Control for Microlithography XXXII; 105852C (2018) https://doi.org/10.1117/12.2302972
Event: SPIE Advanced Lithography, 2018, San Jose, California, United States

Abstract

Dual damascene is an established patterning process for back-end-of-line to generate copper interconnects and lines. One of the critical output parameters is the electrical resistance of the metal lines. In our 200 mm line, this is currently being controlled by a feed-forward control from the etch process to the final step in the CMP process. In this paper, we investigate the impact of alternative feed-forward control using a calibrated physical model that estimates the impact on electrical resistance of the metal lines* . This is done by simulation on a large set of wafers. Three different approaches are evaluated, one of which uses different feed-forward settings for different radial zones in the CMP process.

Citation Download Citation

Gerd Krause, Detlef Hofmann, Boris Habets, Stefan Buhl, Manuela Gutsch, Alberto Lopez-Gomez, and Xaver Thrun "Geometry-based across wafer process control in a dual damascene scenario", Proc. SPIE 10585, Metrology, Inspection, and Process Control for Microlithography XXXII, 105852C (13 March 2018); https://doi.org/10.1117/12.2302972

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