Interface engineering in InSb crystal growth for focal plane array device performance

Nathan W. Gray; Andrew Prax; W. Brock Alexander; Jason Merrell

doi:10.1117/12.2305239

23 May 2018 Interface engineering in InSb crystal growth for focal plane array device performance

Nathan W. Gray, Andrew Prax, W. Brock Alexander, Jason Merrell

Proceedings Volume 10624, Infrared Technology and Applications XLIV; 106241U (2018) https://doi.org/10.1117/12.2305239
Event: SPIE Defense + Security, 2018, Orlando, FL, United States

Abstract

We first reported on a process for on-axis InSb crystal growth in 2014. As we have further developed on-axis (111) crystal growth, we have observed and measured a new distinct regime of interface-controlled dopant segregation. This effect is usually overshadowed by the facet effect and the resulting order of magnitude step change in the carrier concentration profile. When this large step change is eliminated, another interface-controlled effect becomes measurable. We present experimental data showing the magnitude of this effect and the crystal growth techniques used to engineer the interface where this effect is uncovered. We also discuss the atomic scale growth mechanisms that explain it.

This work proves useful in predicting the range of mechanical and electronic properties of wafers cut from ingots that are grown on-axis. More specifically, by understanding the effect of the melt/solid growth interface on the physical properties on the crystal, growth conditions can be optimized to produce more electrically uniform wafers that minimize pixel-to-pixel variation in FPAs.

Citation Download Citation

Nathan W. Gray, Andrew Prax, W. Brock Alexander, and Jason Merrell "Interface engineering in InSb crystal growth for focal plane array device performance", Proc. SPIE 10624, Infrared Technology and Applications XLIV, 106241U (23 May 2018); https://doi.org/10.1117/12.2305239

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