Toward all-silicon optical receivers: photon trapping and manipulation using nanostructures (Conference Presentation)

Hilal Cansizoglu; Yang Gao; Cesar Bartolo Perez; Soroush Ghandiparsi; Kazim G. Polat; Hasina H. Mamtaz; Ekaterina Ponizovskaya Devine; Toshishige Yamada; Aly Elrefaie; Shih-Yuan Wang; Saif Islam

doi:10.1117/12.2323457

17 September 2018 Toward all-silicon optical receivers: photon trapping and manipulation using nanostructures (Conference Presentation)

Hilal Cansizoglu, Yang Gao, Cesar Bartolo Perez, Soroush Ghandiparsi, Kazim G. Polat, Hasina H. Mamtaz, Ekaterina Ponizovskaya Devine, Toshishige Yamada, Aly Elrefaie, Shih-Yuan Wang, Saif Islam

Author Affiliations +

Proceedings Volume 10725, Low-Dimensional Materials and Devices 2018; 107250B (2018) https://doi.org/10.1117/12.2323457
Event: SPIE Nanoscience + Engineering, 2018, San Diego, California, United States

Abstract

Development of cost-effective and power-efficient optical interconnects is required to meet high demand of data transfer in the era of Internet of Things (IoT) that is expected to connect billions of sensors with different functionalities. The cost of optical links must be reduced for a wide adoption of optical interconnects in the fast data transmission systems. Monolithic integration of ultra-fast photodetectors (PDs), one of the major components of optical receivers-with CMOS/BiCMOS circuits, can reduce the cost dramatically. However, expensive material systems and non-CMOS-compatible processing utilized in the current high-speed photodetectors do not promise a monolithic integration to the required circuitry in the near future. On the other hand, high speed PDs with CMOS-compatible material systems such as silicon (Si), germanium (Ge) or SiGe alloys have poor responsivity for the wavelengths of interest at data rates 10 Gb/s or higher. Our solution to this problem is to increase the optical absorption properties of the semiconductor by introducing micro-/nanoscale air holes to the material. Such micro/nanoholes support an ensemble of modes that propagate laterally inside in a very thin layer of semiconductor (<2µm) which is required for high speed operations. The recent demonstration of surface-illuminated high-speed (>25Gb/s) and high efficiency (>50%) Si PDs with integrated micro-/nanoholes proved that light bending can enable ultra-fast Si-based PDs for monolithic integration with CMOS/BiCMOS circuits to realize cost-effective all-Si optical receivers. In this talk, a review of state-of-the art ultra-fast Si PDs for short-reach data communication will be presented and high speed and high efficiency PDs with alternative Si-based material systems will be demonstrated for the applications in long-reach optical links. Future opportunities that light-bending phenomenon can offer in high performance PD design for various applications such as single photon detection, LIDAR and high-performance computing will be discussed.

Conference Presentation

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Hilal Cansizoglu, Yang Gao, Cesar Bartolo Perez, Soroush Ghandiparsi, Kazim G. Polat, Hasina H. Mamtaz, Ekaterina Ponizovskaya Devine, Toshishige Yamada, Aly Elrefaie, Shih-Yuan Wang, and Saif Islam "Toward all-silicon optical receivers: photon trapping and manipulation using nanostructures (Conference Presentation)", Proc. SPIE 10725, Low-Dimensional Materials and Devices 2018, 107250B (17 September 2018); https://doi.org/10.1117/12.2323457

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KEYWORDS

Palladium

Receivers

Nanostructures

Silicon

Ultrafast phenomena

Germanium

Integrated optics

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