PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
High Density Vertically Integrated Photodiodes (HDVIP) MWIR detectors were fabricated in LPE-grown Mercury Cadmium Telluride material. Devices were fabricated with two different acceptor level concentrations. The low doped n-region was held at a single concentration but the dimensions are tailored to simultaneously maintain high quantum efficiency while minimizing dark current and 1/f noise. Since this study target was for operating at high temperatures, detector I-V data was collected between 120 K and 280 K for I-Vs and 180 to 280 K for noise to understand current mechanisms that limit device performance at these elevated temperatures. Noise as a function of frequency has also been collected over the same temperature range. 1/f noise has also been modeled for MWIR detectors as a function of temperature and will be covered.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
E. Robinson, V. R. Khalap, A. I. D'Souza, M. R. Skokan, M. Kinch, "High operating temperature MCT discrete detector data and analysis," Proc. SPIE 10766, Infrared Sensors, Devices, and Applications VIII, 107660E (18 September 2018); https://doi.org/10.1117/12.2323256