Poly-Si TFTs for Active-Matrix LCDs

Shinji Morozumi; Hiroyuki Ohshima

doi:10.1117/12.976411

25 July 1989 Poly-Si TFTs for Active-Matrix LCDs

Shinji Morozumi, Hiroyuki Ohshima

Proceedings Volume 1080, Liquid Crystal Chemistry, Physics, and Applications; (1989) https://doi.org/10.1117/12.976411
Event: OE/LASE '89, 1989, Los Angeles, CA, United States

Abstract

Polycrystalline silicon thin film transistors (poly-Si TFTs) have been applied to active-matrix liquid-crystal displays (LCDs) because of high mobility and stability which enable the integration of driver circuits on the glass substrates. For small size LCDs up to 5 inches in diagonal, high temperature processes using a thermally grown gate oxide film have been used. Poly-Si TFT driver circuits with sufficient electrical characteristics can be integrated on the substrates in such displays. For large area displays of up to 10 inches in diagonal, a low temperature process which allows fabrication of poly-Si TFTs on normal glass substrates at about 600°C has been developed. The electrical properties of low temperature processed poly-Si TFT circuits have approached the level necessary for integration. To increase the carrier mobility and decrease the threshold voltage, plasma hydrogenation, solid-phase grain growth, and laser annealing have been used.

Citation Download Citation

Shinji Morozumi and Hiroyuki Ohshima "Poly-Si TFTs for Active-Matrix LCDs", Proc. SPIE 1080, Liquid Crystal Chemistry, Physics, and Applications, (25 July 1989); https://doi.org/10.1117/12.976411

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