Massive CD metrology for EUV failure characterization and EPE metrology

Harm Dillen; Yi-Hsin Chang; Fei Wang; Marc Kea; Gijsbert Rispens; Marleen Kooiman; Fuming Wang; Stefan Hunsche; Daniel Tien; Peng Tang; Pengcheng Zhang

doi:10.1117/12.2502495

3 October 2018 Massive CD metrology for EUV failure characterization and EPE metrology

Harm Dillen, Yi-Hsin Chang, Fei Wang, Marc Kea, Gijsbert Rispens, Marleen Kooiman, Fuming Wang, Stefan Hunsche, Daniel Tien, Peng Tang, Pengcheng Zhang

Author Affiliations +

Proceedings Volume 10809, International Conference on Extreme Ultraviolet Lithography 2018; 108090C (2018) https://doi.org/10.1117/12.2502495
Event: SPIE Photomask Technology + Extreme Ultraviolet Lithography, 2018, Monterey, California, United States

Abstract

Traditionally, the performance of a lithography or patterning step is described by its mean size and the spread at a 3 sigma probability. Recent papers by Bristol, Brunner and others have shown this is insufficient to describe the process capability in EUV lithography. To address this challenge, an enormous increase of sampling CD (critical dimension) values is needed to describe the actual distribution on the wafer. We will show how we can address this by leveraging the HMI eP5 e-Beam system to acquire a set of CDs of previously unknown size. We will further show that extended sampling leads to better understanding of this phenomena, as we can probe full distribution behavior even on a limited number of repeated exposures on a wafer.

Conference Presentation

Citation Download Citation

Harm Dillen, Yi-Hsin Chang, Fei Wang, Marc Kea, Gijsbert Rispens, Marleen Kooiman, Fuming Wang, Stefan Hunsche, Daniel Tien, Peng Tang, and Pengcheng Zhang "Massive CD metrology for EUV failure characterization and EPE metrology", Proc. SPIE 10809, International Conference on Extreme Ultraviolet Lithography 2018, 108090C (3 October 2018); https://doi.org/10.1117/12.2502495

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