Sensitive THz material characterization with microfluidic device in total internal reflection geometry

Xudong Liu; Qiushuo Sun; Fushi Wang; Mingyang Jia; Yiwen Sun

doi:10.1117/12.2502512

9 November 2018 Sensitive THz material characterization with microfluidic device in total internal reflection geometry

Xudong Liu, Qiushuo Sun, Fushi Wang, Mingyang Jia, Yiwen Sun

Proceedings Volume 10826, Infrared, Millimeter-Wave, and Terahertz Technologies V; 108260H (2018) https://doi.org/10.1117/12.2502512
Event: SPIE/COS Photonics Asia, 2018, Beijing, China

Abstract

Here, we proposed the thin-film total internal reflection geometry (TF-TIR) for sensitive material characterization. Equations to extract the material dielectric constant in the TF-TIR geometry was derived. The TF-TIR technique consumes less sample material and provides higher sensitivity compared with the traditional attenuated total reflection (ATR) geometry. The sensitivity of TF-TIR geometry was first investigated by simulation using a 10 μm thick α-lactose thin film as the sample. A THz microfluidic device was fabricated according to the TF-TIR design in the simulation with TOPAS and high-resistivity Si as the top and bottom plate, respectively. The reaction chamber was sandwiched between the TOPAS and Si plates. The device was placed on a right-angle Si prism to realize the total internal reflection. Water and alcohol mixtures were used to verify the sensitivity of the device. Our results demonstrate that the TF-TIR technique has the potential to improve the sensitivity in measuring the dielectric constant of biological samples with THz waves. Our design can be used for THz lab-on-chip devices.

Citation Download Citation

Xudong Liu, Qiushuo Sun, Fushi Wang, Mingyang Jia, and Yiwen Sun "Sensitive THz material characterization with microfluidic device in total internal reflection geometry", Proc. SPIE 10826, Infrared, Millimeter-Wave, and Terahertz Technologies V, 108260H (9 November 2018); https://doi.org/10.1117/12.2502512

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