Broadband antireflection coating for the near-infrared InAs/GaSb Type-II superlattices photodetectors by lift-off process

Qing-xuan Jia; Chun-yan Guo; Yao-yao Sun; Cheng-ao Yang; Yue-xi Lv II; Zhi Jiang; Da-nong Zheng; Xi Han; Dong-wei Jiang; Guo-wei Wang; Zhi-chuan Niu

doi:10.1117/12.2509181

9 November 2018 Broadband antireflection coating for the near-infrared InAs/GaSb Type-II superlattices photodetectors by lift-off process

Qing-xuan Jia, Chun-yan Guo, Yao-yao Sun, Cheng-ao Yang, Yue-xi Lv II, Zhi Jiang, Da-nong Zheng, Xi Han, Dong-wei Jiang, Guo-wei Wang, Zhi-chuan Niu

Author Affiliations +

Proceedings Volume 10826, Infrared, Millimeter-Wave, and Terahertz Technologies V; 108261Z (2018) https://doi.org/10.1117/12.2509181
Event: SPIE/COS Photonics Asia, 2018, Beijing, China

Abstract

Near-infrared InAs/GaSb Type-Ⅱ superlattices is widely used in biomimetics, sensing, color-imaging technology and other applications. An antireflection coating(AR coating) can help it perform better, making the infrared photodetector a higher responstivity and also a higher quantum efficiency. We produce a broadband AR coating by plasma-enhanced chemical vapor deposition(PECVD) then using the lift-off technology making no damage without any change in the usual Infrared detector process flow, a 260 nm SiO₂ AR coating is transform onto the surface of the infrared photodetector. After using the AR coating, the antireflection can provide up to 40% light gain, while the average reflectivity of the surface of InAs/GaSb type-Ⅱ superlattice is decreased from 33% to 14%. The responsitivity is increased obviously.

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Qing-xuan Jia, Chun-yan Guo, Yao-yao Sun, Cheng-ao Yang, Yue-xi Lv II, Zhi Jiang, Da-nong Zheng, Xi Han, Dong-wei Jiang, Guo-wei Wang, and Zhi-chuan Niu "Broadband antireflection coating for the near-infrared InAs/GaSb Type-II superlattices photodetectors by lift-off process", Proc. SPIE 10826, Infrared, Millimeter-Wave, and Terahertz Technologies V, 108261Z (9 November 2018); https://doi.org/10.1117/12.2509181

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