Paper
30 January 1989 Evaluating Process Optimums for Production VLSI Lithography
Erik S. Brown, William C. Nelson, Gene Howland
Author Affiliations +
Abstract
A new statistical analysis technique will be shown for process comparisons and optimization in production photolithography. The experimental layout proposed allows for efficient collection of data off-line for calculation of a process index relating the 6 sigma repeatability to assumed specification limits for each experimental cell of a full factorial experiment. Appropriate blocking of the experiment and number of repeats used allows the process index to be compared to the process capability calculations in popular use throughout the semiconductor industry.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Erik S. Brown, William C. Nelson, and Gene Howland "Evaluating Process Optimums for Production VLSI Lithography", Proc. SPIE 1086, Advances in Resist Technology and Processing VI, (30 January 1989); https://doi.org/10.1117/12.953068
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KEYWORDS
Photomasks

Lithography

Semiconducting wafers

Modeling

Cadmium

Critical dimension metrology

Photoresist developing

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