CONFERENCE PROCEEDINGS
Advanced Search
Home > Proceedings > Volume 10913 > Article
Presentation + Paper
27 February 2019 Temperature and excitation dependence of recombination in CIGS thin films with high spatial resolution
Harvey Guthrey, John Moseley, Jiro Nishinaga, Hajime Shibata, Hideki Takahashi , Mowafak Al-Jassim
Author Affiliations +
Proceedings Volume 10913, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VIII; 1091308 (2019) https://doi.org/10.1117/12.2508802
Event: SPIE OPTO, 2019, San Francisco, California, United States
Abstract
Alkali post-deposition treatments significantly improve the performance of CuInGaSe2 (CIGS) devices, but there is still room for improvement. Here, we investigate the effects of potassium fluoride alkali post-deposition treatment on the defect chemistry and recombination at grain boundaries and grain interiors using temperature- and injection-dependent cathodoluminescence (CL) spectrum imaging. We study CIGS thin films grown on alkali-free sapphire substrates to isolate the effects of alkali treatment from alkali metals that can diffuse from standard soda-lime glass substrates. We find that alkali treatment affects the energy and temperature dependence of the luminescence peaks, as well as the defect activation energies. CL spectrum images reveal that the luminescence transitions at grain boundaries have a distinct power dependence after alkali treatment and substantially different defect chemistry. This work shows that temperatureand injection-dependence CL spectrum images can provide unique insight into the defect chemistry and recombination behavior of CIGS thin films.
Conference Presentation
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation Download Citation
Harvey Guthrey, John Moseley, Jiro Nishinaga, Hajime Shibata, Hideki Takahashi , and Mowafak Al-Jassim "Temperature and excitation dependence of recombination in CIGS thin films with high spatial resolution", Proc. SPIE 10913, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VIII, 1091308 (27 February 2019); https://doi.org/10.1117/12.2508802
ACCESS THE FULL ARTICLE
ORGANIZATIONAL
Sign in with credentials provided by your organization.
INSTITUTIONAL
Select your institution to access the SPIE Digital Library.
SELECT YOUR INSTITUTION
PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
PERSONAL SIGN IN
No SPIE Account? Create one
PURCHASE THIS CONTENT
SUBSCRIBE TO DIGITAL LIBRARY
50 downloads per 1-year subscription
Members: $195
Non-members: $335 ADD TO CART
25 downloads per 1 - year subscription
Members: $145
Non-members: $250 ADD TO CART
PURCHASE SINGLE ARTICLE
Includes PDF, HTML & Video, when available
Members: $17.00
Non-members: $21.00 ADD TO CART
PROCEEDINGS
 10 PAGES + PRESENTATION
DOWNLOAD PAPER SAVE TO MY LIBRARY
WATCH
PRESENTATION
GET CITATION
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Copper indium gallium selenide
Thin films
Spatial resolution
RELATED CONTENT
Subscribe to Digital Library
Receive Erratum Email Alert
Back to Top