Normally-off p-GaN gate InAlN/GaN HEMTs grown on silicon substrates

Melisa Ekin Gulseren; Berkay Bozok; Gokhan Kurt; Omer Ahmet Kayal; Mustafa Ozturk; Sertac Ural; Bayram Butun; Ekmel Ozbay

doi:10.1117/12.2507398

1 March 2019 Normally-off p-GaN gate InAlN/GaN HEMTs grown on silicon substrates

Melisa Ekin Gulseren, Berkay Bozok, Gokhan Kurt, Omer Ahmet Kayal, Mustafa Ozturk, Sertac Ural, Bayram Butun, Ekmel Ozbay

Author Affiliations +

Proceedings Volume 10918, Gallium Nitride Materials and Devices XIV; 109181A (2019) https://doi.org/10.1117/12.2507398
Event: SPIE OPTO, 2019, San Francisco, California, United States

Abstract

A normally-off InAlN/GaN high electron mobility transistor (HEMT) on Si substrate with a p-GaN gate is reported. Devices are fabricated on two different epitaxial structures, one containing a high resistive GaN buffer layer and one containing an AlGaN back-barrier, and the threshold voltage, drain current density, and buffer leakage current are compared. With the epitaxial structure containing a high resistive GaN layer, normally-off operation with a threshold voltage of +0.5 V is achieved. The threshold voltage is further increased to +2 V with the AlGaN back-barrier, and the buffer leakage current was improved by over an order of magnitude.

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Melisa Ekin Gulseren, Berkay Bozok, Gokhan Kurt, Omer Ahmet Kayal, Mustafa Ozturk, Sertac Ural, Bayram Butun, and Ekmel Ozbay "Normally-off p-GaN gate InAlN/GaN HEMTs grown on silicon substrates", Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 109181A (1 March 2019); https://doi.org/10.1117/12.2507398

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