Incorporating quantum dots in a Magnesium Fluoride matrix to enable deep-UV sensitivity for standard silicon based imaging detectors

Alexander Knowles; Scott Williams; Zoran Ninkov; Ross Robinson; Suraj Bhaskaran

doi:10.1117/12.2517865

13 May 2019 Incorporating quantum dots in a Magnesium Fluoride matrix to enable deep-UV sensitivity for standard silicon based imaging detectors

Alexander Knowles, Scott Williams, Zoran Ninkov, Ross Robinson, Suraj Bhaskaran

Author Affiliations +

Proceedings Volume 10982, Micro- and Nanotechnology Sensors, Systems, and Applications XI; 1098234 (2019) https://doi.org/10.1117/12.2517865
Event: SPIE Defense + Commercial Sensing, 2019, Baltimore, MD, United States

Abstract

CdSe/ZnS quantum dot (QD) incorporation into a magnesium fluoride matrix that is transparent at deep VUV wavelengths was developed. Silicon-based CMOS and CCD detectors coated with a thick Lumogen layer is an inexpensive detector technology to sensitize commercial devices at deep UV wavelengths. QDs, however, may provide additional advantages over Lumogen, such as tunable emission wavelength and lower production costs. We have developed an air stable MgF₂ sol-gel composition optimized for ink jet printing, that forms a transparent film when sintered at moderately low temperature. Water-soluble CdSe/ZnS quantum dots were incorporated into this ink jet printable sol-gel composition to fabricate a functionalized luminescent film. Optical spectroscopic measurements and quantum yield analysis demonstrated that CdSe/ZnS quantum dots incorporated into an MgF₂ matrix provides a novel and effective alternative to Lumogen with enhanced detection characteristics.

Citation Download Citation

Alexander Knowles, Scott Williams, Zoran Ninkov, Ross Robinson, and Suraj Bhaskaran "Incorporating quantum dots in a Magnesium Fluoride matrix to enable deep-UV sensitivity for standard silicon based imaging detectors", Proc. SPIE 10982, Micro- and Nanotechnology Sensors, Systems, and Applications XI, 1098234 (13 May 2019); https://doi.org/10.1117/12.2517865

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