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15 March 2019 Formation of surface states in MOS devices by space radiation protons
Artem N. Volkov, Dmitrii V. Andreev, Vladimir M. Maslovsky
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Proceedings Volume 11022, International Conference on Micro- and Nano-Electronics 2018; 1102208 (2019) https://doi.org/10.1117/12.2522389
Event: The International Conference on Micro- and Nano-Electronics 2018, 2018, Zvenigorod, Russian Federation
Abstract
This paper proposes the model, which is able to take into account an influence of space radiation on the process of surface states formation in MOS devices in contrast to existing models. We theoretically validate mechanisms of influence of space radiation protons on formation of surface states in MOS devices, which are different from known.
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Artem N. Volkov, Dmitrii V. Andreev, and Vladimir M. Maslovsky "Formation of surface states in MOS devices by space radiation protons", Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 1102208 (15 March 2019); https://doi.org/10.1117/12.2522389
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KEYWORDS
Transistors
Dielectrics
Interfaces
Ionization
Particles
Silicon
Failure analysis
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