Paper
12 March 2019 High brightness narrow-stripe broad-area diode lasers at 976 nm
Author Affiliations +
Proceedings Volume 11023, Fifth Symposium on Novel Optoelectronic Detection Technology and Application; 110234H (2019) https://doi.org/10.1117/12.2521923
Event: Fifth Symposium on Novel Optoelectronic Detection Technology and Application, 2018, Xi'an, China
Abstract
In this research, the transversal mode of 970 nm broad area laser diode based on a large optical cavity is studied. The vertical far-field patterns were measured to be dependent on the cavity caused facet loss. High-orders modes achieve lasing with higher facet loss while they can be completely suppressed by a low facet loss. The suppression of high-order modes was attributed to be an increase in the discrimination of differential quantum efficiency between high-order modes and the fundamental mode, which matches well with simulation. When the discrimination exceeds probable fluctuations, the high-order modes will be completely suppressed and lasing of single fundamental mode will achieve. According to our experiment results, the optimal resonance cavity length is about 6 mm in order to realize fundamental mode and simultaneously a high slope efficiency. As a consequence, high efficiency 970 nm broad area laser with slope efficiency over 1.07 W/A and full wavelength half maximum (FWHM) less than 2 nm@1A is demonstrated.
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Yi Li, Weichuan Du, Kun Zhou, Junjie Kang, Songxin Gao, Deyong Wu, Yao Hu, Liang Zhang, Hao Tan, and Chun Tang "High brightness narrow-stripe broad-area diode lasers at 976 nm", Proc. SPIE 11023, Fifth Symposium on Novel Optoelectronic Detection Technology and Application, 110234H (12 March 2019); https://doi.org/10.1117/12.2521923
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KEYWORDS
Semiconductor lasers

Near field

Diodes

Near field optics

Measurement devices

Optical simulations

Fiber lasers

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