Design and simulations of photonic switch using hybrid Ge2Sb2Te5-silicon waveguides in mid-IR region

Nadir Ali; Rajesh Kumar

doi:10.1117/12.2522258

14 February 2019 Design and simulations of photonic switch using hybrid Ge₂Sb₂Te₅-silicon waveguides in mid-IR region

Nadir Ali, Rajesh Kumar

Proceedings Volume 11048, 17th International Conference on Optical Communications and Networks (ICOCN2018); 1104836 (2019) https://doi.org/10.1117/12.2522258
Event: 17th International Conference on Optical Communications and Networks (ICOCN2018), 2018, Zhuhai, China

Abstract

A new window of optical communication is emerging around 2 μm. It is important to design and experimentally demonstrate the photonic devices and components that can support the optical communication in this spectral region by providing the functionalities of switching and routing. The silicon photonics platform for realizing the photonic devices and components will be preferred around 2 μm, like other optical communication windows of 1310 nm and 1550 nm, due to availability of cost effective and high yield CMOS fabrication technology. Photonic switches that are non-volatile in nature and consume lesser power while having ultra-low footprint are likely to be in great demand for future optical communication around 2 μm. Here, we report an ultra-compact 1×1 photonic switch operating at 2.1 μm using nonvolatile phase change material Ge₂Sb₂Te₅ embedded in silicon-on-insulator platform. Embedding of Ge₂Sb₂Te₅in silicon-on-insulator waveguide is done in two different ways to evaluate and compare the switching performance. The emphasis has been on optimization of position and dimensions of Ge₂Sb₂Te₅ in partially and fully etched silicon waveguide. We obtained an extinction ratio of 34.04 dB with low insertion loss of 0.49 dB in ON state with Ge₂Sb₂Te₅ of volume 920 nm× 240 nm × 800 nm (length × height × width) embedded into partially etched silicon waveguide. When Ge₂Sb₂Te₅ is embedded in fully etched silicon waveguide, maximum extinction ratio of ~14dB at the expense of insertion loss of 1.36 dB with Ge₂Sb₂Te₅ of volume 1020 nm× 240 nm × 800 nm.

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Nadir Ali and Rajesh Kumar "Design and simulations of photonic switch using hybrid Ge₂Sb₂Te₅-silicon waveguides in mid-IR region", Proc. SPIE 11048, 17th International Conference on Optical Communications and Networks (ICOCN2018), 1104836 (14 February 2019); https://doi.org/10.1117/12.2522258

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KEYWORDS

Silicon

Waveguides

Switches

Antimony

Germanium

Refractive index

Tellurium

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