High-resolution ptychoraphic imaging of large-scale integrated circuits (Conference Presentation)

Yi Jiang; Junjing Deng; Jeffrey A. Klug; Yudong Yao; Curt A. Preissner; Christian Roehrig; Zhonghou Cai; Barry Lai; Stefan Vogt

doi:10.1117/12.2527505

9 September 2019 High-resolution ptychoraphic imaging of large-scale integrated circuits (Conference Presentation)

Yi Jiang, Junjing Deng, Jeffrey A. Klug, Yudong Yao, Curt A. Preissner, Christian Roehrig, Zhonghou Cai, Barry Lai, Stefan Vogt

Author Affiliations +

Proceedings Volume 11112, X-Ray Nanoimaging: Instruments and Methods IV; 111120F (2019) https://doi.org/10.1117/12.2527505
Event: SPIE Optical Engineering + Applications, 2019, San Diego, California, United States

Abstract

X-ray ptychography has become a standard technique for imaging materials at <10 nanometer spatial resolution. Recent developments have shown its potential in obtaining quantitative images of the 2D/3D structure of large objects at millimeter and centimeter-scale, which requires not only new instrumentation and experiment design, but high-throughput workflow for data processing. At Argonne’s Advanced Photon Source, we imaged an integrated chip with over 600 × 600 µm^2 field of view at sub-20 nm spatial resolution and achieved 3000 Hz data acquisition rate with advanced motion control. Here, we discuss challenges in achieving large-area reconstruction and explore strategies for streamlining data processing. We demonstrate a novel data acquisition scheme that combines the merits of both step scan and (continuous) fly scan. Inaccurate scan position and large beam variation also degrade image quality and need to be corrected during reconstruction.

Conference Presentation

Citation Download Citation

Yi Jiang, Junjing Deng, Jeffrey A. Klug, Yudong Yao, Curt A. Preissner, Christian Roehrig, Zhonghou Cai, Barry Lai, and Stefan Vogt "High-resolution ptychoraphic imaging of large-scale integrated circuits (Conference Presentation)", Proc. SPIE 11112, X-Ray Nanoimaging: Instruments and Methods IV, 111120F (9 September 2019); https://doi.org/10.1117/12.2527505

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