Paper
20 December 2019 Hybrid integration of high-speed MUTC-PD on SOI
Author Affiliations +
Proceedings Volume 11209, Eleventh International Conference on Information Optics and Photonics (CIOP 2019); 112091C (2019) https://doi.org/10.1117/12.2543930
Event: Eleventh International Conference on Information Optics and Photonics (CIOP 2019), 2019, Xi'an, China
Abstract
A hybrid integration method of back-illuminated modified uni-traveling carrier photodiode (MUTC-PD) on silicon-oninsulator (SOI) is demonstrated. Compared with the die-to-die bonding of unprocessed III-V die, this hybrid bonding method, implemented by a flip-chip bonding machine, is more convenient and flexible, thus providing a more direct path to utilizing high-speed PDs in integrated microwave photonics on SOI. As a result, the integrated photodetector exhibits a 3-dB bandwidth of 30 GHz, showing no degradation compared with the bandwidth before bonding.
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Enfei Chao, Bing Xiong, Changzheng Sun, Zhibiao Hao, Lai Wang, Jian Wang, Yanjun Han, Hongtao Li, Jiadong Yu, and Yi Luo "Hybrid integration of high-speed MUTC-PD on SOI", Proc. SPIE 11209, Eleventh International Conference on Information Optics and Photonics (CIOP 2019), 112091C (20 December 2019); https://doi.org/10.1117/12.2543930
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KEYWORDS
Photodiodes

Adhesives

Back illuminated sensors

Diffraction gratings

Microwave photonics

Optical alignment

Silicon

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