InGaN frequency stabilized high-power devices for atom-cooling and trapping enabling quantum technology (Conference Presentation)

Ludwig Prade; John Macarthur; Loyd McKnight; William Dorward; John Sharp; Stephen Najda; Piotr Perlin; Tadeusz Suski; Łucja Marona; Szymon Stanczyk; Przemek Wisniewski; Szymon Grzanka; Dario Schiavon; Michał Leszczynski

doi:10.1117/12.2546696

10 March 2020 InGaN frequency stabilized high-power devices for atom-cooling and trapping enabling quantum technology (Conference Presentation)

Ludwig Prade, John Macarthur, Loyd McKnight, William Dorward, John Sharp, Stephen Najda, Piotr Perlin, Tadeusz Suski, Łucja Marona, Szymon Stanczyk, Przemek Wisniewski, Szymon Grzanka, Dario Schiavon, Michał Leszczynski

Author Affiliations +

Proceedings Volume 11280, Gallium Nitride Materials and Devices XV; 112800X (2020) https://doi.org/10.1117/12.2546696
Event: SPIE OPTO, 2020, San Francisco, California, United States

Abstract

Quantum based devices offer distinct advantages over conventional technology, such as improved sensitivity for sensing applications or enhanced accuracy for metrology. To utilize this potential, a number of technical requirements must be met, such as the cooling and trapping of neutral atoms for their use as quantum systems. We present our work on InGaN-based semiconductor cooling lasers for a variety of atomic species such as strontium, magnesium and ytterbium whos target wavelength was met by quantum-well composition engineering. Results on growth-epitaxy, facet coating as well as different configurations such as ECDL and MOPAs are presented, depending on the requirement of the application.

Conference Presentation

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Ludwig Prade, John Macarthur, Loyd McKnight, William Dorward, John Sharp, Stephen Najda, Piotr Perlin, Tadeusz Suski, Łucja Marona, Szymon Stanczyk, Przemek Wisniewski, Szymon Grzanka, Dario Schiavon, and Michał Leszczynski "InGaN frequency stabilized high-power devices for atom-cooling and trapping enabling quantum technology (Conference Presentation)", Proc. SPIE 11280, Gallium Nitride Materials and Devices XV, 112800X (10 March 2020); https://doi.org/10.1117/12.2546696

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