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10 March 2020 Current-controlled spin-orbit torque switching in antiferromagnetic PtMn devices (Conference Presentation)
Victor Lopez Dominguez, Jiacheng Shi, Francesca Garesci, Chulin Wang, Hamid Almasi, Matthew Grayson, Giovanni Finocchio, Pedram Khalili
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Proceedings Volume 11288, Quantum Sensing and Nano Electronics and Photonics XVII; 112880Z (2020) https://doi.org/10.1117/12.2545391
Event: SPIE OPTO, 2020, San Francisco, California, United States
Abstract
In this work, we investigate the current-induced switching in micrometer-scale circular memory bits based on the metallic antiferromagnet PtMn, which is already widely used as part of the pinned layer in in-plane magnetic tunnel junctions manufactured on CMOS. The device shows reversible switching in response to currents applied to the Pt layer, with opposite current polarities achieving opposite switching directions in the PtMn. The switching current density is ~2 MA/cm2. We show that the switching process is essentially unaffected by external fields up to 16 T, and is robust over a wide temperature range. We also investigate the switching process by micromagnetic simulations, which shed light on the current-controlled domain structure of the device and the role of different torque terms in the switching process. Our results pave the way towards practical antiferromagnetic memories integrated on silicon.
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Victor Lopez Dominguez, Jiacheng Shi, Francesca Garesci, Chulin Wang, Hamid Almasi, Matthew Grayson, Giovanni Finocchio, and Pedram Khalili "Current-controlled spin-orbit torque switching in antiferromagnetic PtMn devices (Conference Presentation)", Proc. SPIE 11288, Quantum Sensing and Nano Electronics and Photonics XVII, 112880Z (10 March 2020); https://doi.org/10.1117/12.2545391
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KEYWORDS
Switching
Platinum
Atomic force microscopy
Magnetism
Dielectrics
Manufacturing
Metals
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