CONFERENCE PROCEEDINGS
Advanced Search
Home > Proceedings > Volume 11301 > Article
Presentation
9 March 2020 InGaN/AlGaInN quantum wells for low-threshold laser active region (Conference Presentation)
Hanlin Fu, Damir Borovac, Justin Goodrich, Onoriode Ogidi-Ekoko, Nelson Tansu
Author Affiliations +
Proceedings Volume 11301, Novel In-Plane Semiconductor Lasers XIX; 1130103 (2020) https://doi.org/10.1117/12.2548652
Event: SPIE OPTO, 2020, San Francisco, California, United States
Abstract
The self-consistent 6-band k∙p calculations of AlGaInN barriers surrounding the InGaN quantum well (QW) emitting at ~495 nm show ~ 30% increase in material gain and ~ 40% reduction in threshold current density, compared to the conventional InGaN / GaN QW structure. Following the guidance of our computational study, the InGaN / AlGaInN multiple QW structures with different AlGaInN alloy compositions lattice-matched to GaN are grown via MOVPE. The use of InGaN / AlInN QW structure resulted in improved luminescence, and the results of InGaN / AlGaInN with larger compositional range will also be presented.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation Download Citation
Hanlin Fu, Damir Borovac, Justin Goodrich, Onoriode Ogidi-Ekoko, and Nelson Tansu "InGaN/AlGaInN quantum wells for low-threshold laser active region (Conference Presentation)", Proc. SPIE 11301, Novel In-Plane Semiconductor Lasers XIX, 1130103 (9 March 2020); https://doi.org/10.1117/12.2548652
ACCESS THE FULL ARTICLE
ORGANIZATIONAL
Sign in with credentials provided by your organization.
INSTITUTIONAL
Select your institution to access the SPIE Digital Library.
SELECT YOUR INSTITUTION
PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
PERSONAL SIGN IN
No SPIE Account? Create one
PURCHASE THIS CONTENT
SUBSCRIBE TO DIGITAL LIBRARY
50 downloads per 1-year subscription
Members: $195
Non-members: $335 ADD TO CART
25 downloads per 1 - year subscription
Members: $145
Non-members: $250 ADD TO CART
PURCHASE SINGLE ARTICLE
Includes PDF, HTML & Video, when available
Members: $17.00
Non-members: $21.00 ADD TO CART
PROCEEDINGS
 PRESENTATION
WATCH
PRESENTATION SAVE TO MY LIBRARY
GET CITATION
Advertisement
Advertisement
KEYWORDS
Indium gallium nitride
Quantum wells
Gallium nitride
Heterojunctions
Luminescence
Optoelectronic devices
Optoelectronics
RELATED CONTENT
Subscribe to Digital Library
Receive Erratum Email Alert
Back to Top