Challenges and opportunities of MOVPE and THVPE/HVPE for nitride light emitting device

K. Matsumoto; A. Yamaguchi; Y. Yano; H. Tokunaga; A. Mishima; Y. Tomita; Y. Yamaoka; S. Koseki; T. Arimura

doi:10.1117/12.2543943

25 February 2020 Challenges and opportunities of MOVPE and THVPE/HVPE for nitride light emitting device

K. Matsumoto, A. Yamaguchi, Y. Yano, H. Tokunaga, A. Mishima, Y. Tomita, Y. Yamaoka, S. Koseki, T. Arimura

Proceedings Volume 11302, Light-Emitting Devices, Materials, and Applications XXIV; 113020N (2020) https://doi.org/10.1117/12.2543943
Event: SPIE OPTO, 2020, San Francisco, California, United States

Abstract

Challenges and opportunities of MOVPE and THVPE/HVPE for nitride light emitting devices are discussed. Attempts to grow uniform and high quality epitaxial layers for both visible and UV range are presented. In order to examine the possibility of using a bulk GaN substrate, cost parity condition of GaN on GaN LED compared with LED on sapphire is presented in terms of a lumen per dollar. It is important to improve through-put of HVPE for GaN substrate manufacturing. Tri-halide VPE (THVPE) is introduced as a newly evolving technology with a high growth rate of 300μm/h at a high growth temperature of 1250ºC, which may replace HVPE for a bulk GaN substrate. Economical consideration of the comparison of HVPE and THVPE is discussed. Regarding UVC LEDs, there is an option to use a high quality AlN template on sapphire which is fabricated by 1700ºC annealing at nitrogen with a face to face configuration. Possible cost reduction and remaining issue are described.

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K. Matsumoto, A. Yamaguchi, Y. Yano, H. Tokunaga, A. Mishima, Y. Tomita, Y. Yamaoka, S. Koseki, and T. Arimura "Challenges and opportunities of MOVPE and THVPE/HVPE for nitride light emitting device", Proc. SPIE 11302, Light-Emitting Devices, Materials, and Applications XXIV, 113020N (25 February 2020); https://doi.org/10.1117/12.2543943

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