Detectivity and dark current analysis for quantum dot photodetectors with Ge/Si

Rahaf M. H. Douhan; Andrey P. Kokhanenko; Kirill A. Lozovoy

doi:10.1117/12.2553199

11 December 2019 Detectivity and dark current analysis for quantum dot photodetectors with Ge/Si

Rahaf M. H. Douhan, Andrey P. Kokhanenko, Kirill A. Lozovoy

Proceedings Volume 11322, XIV International Conference on Pulsed Lasers and Laser Applications; 113220P (2019) https://doi.org/10.1117/12.2553199
Event: XIV International Conference on Pulsed Lasers and Laser Applications (AMPL-2019), 2019, Tomsk, Russian Federation

Abstract

The work discusses infrared photodetectors with quantum dots of germanium on silicon. The calculation of certain characteristics of detectors such as: dark current and detectivity in several modes: thermal generation mode, generation-recombination mode and background limited performance mode.

Citation Download Citation

Rahaf M. H. Douhan, Andrey P. Kokhanenko, and Kirill A. Lozovoy "Detectivity and dark current analysis for quantum dot photodetectors with Ge/Si", Proc. SPIE 11322, XIV International Conference on Pulsed Lasers and Laser Applications, 113220P (11 December 2019); https://doi.org/10.1117/12.2553199

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