CD uniformity improvement for sub 20 nm DRAM process with negative tone development

Y. C. Lin; Mifong Wu; Le Wang; Baijun Sun; Hiroki Ohtaguro; Takeshi Shimoaoki; Yusaku Hashimoto; Koichi Hontake

doi:10.1117/12.2551835

23 March 2020 CD uniformity improvement for sub 20 nm DRAM process with negative tone development

Y. C. Lin, Mifong Wu, Le Wang, Baijun Sun, Hiroki Ohtaguro, Takeshi Shimoaoki, Yusaku Hashimoto, Koichi Hontake

Proceedings Volume 11326, Advances in Patterning Materials and Processes XXXVII; 1132620 (2020) https://doi.org/10.1117/12.2551835
Event: SPIE Advanced Lithography, 2020, San Jose, California, United States

Abstract

NTD (Negative Tone Developer) technology with application of developer to ArF immersion is one of the technologies that is well known and widely used for enabling better optical image contrast. For critical layer processes, CD (Critical Dimension) control is more difficult with narrow trench and contact hole pattern. Since it is difficult to obtain better CDU (Critical Dimension Uniformity) once mask and resist set have been fixed, new NTD processes are required to improve it. CXMT (Chang Xin Memory Technologies) has been continuously developing manufacturing processes based on new NTD method for narrow pattern DRAM process with TEL™ (Tokyo Electron Limited). In this paper, we discuss our work for CDU improvement with new process on Global, Inter, and Intra shot CDU as well as the optimization results of chemical consumption.

Citation Download Citation

Y. C. Lin, Mifong Wu, Le Wang, Baijun Sun, Hiroki Ohtaguro, Takeshi Shimoaoki, Yusaku Hashimoto, and Koichi Hontake "CD uniformity improvement for sub 20 nm DRAM process with negative tone development", Proc. SPIE 11326, Advances in Patterning Materials and Processes XXXVII, 1132620 (23 March 2020); https://doi.org/10.1117/12.2551835

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
8 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Semiconducting wafers

Critical dimension metrology

Image processing

Particles

Inspection

Manufacturing

Arsenic

Show All Keywords

Keywords/Phrases

Search In:

Publication Years