Paper
18 December 2019 Directly modulated semiconductor lasers with surface high-order grating fabricated by standard photolithography
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Abstract
Directly modulated semiconductor lasers (DMLs) with surface high-order grating have been designed, fabricated and measured. The output powers under different temperatures were measured, and there are almost no kinks among all the light-power curves. The threshold current is 22 mA with a slope efficiency of 0.21 mW/mA at 25 ℃. The side-mode suppression ratio (SMSR) over 30 dB is achieved. The wavelength red-shifting caused by current-induced heating is at a ratio of 0.03 nm/mA. Small signal response of this kind of lasers with surface high-order grating was measured at 25 ℃ and the -3 dB bandwidth is 11 GHz.
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Pijie Ma, Fengxin Dong, Anjin Liu, and Wanhua Zheng "Directly modulated semiconductor lasers with surface high-order grating fabricated by standard photolithography", Proc. SPIE 11334, AOPC 2019: Optoelectronic Devices and Integration; and Terahertz Technology and Applications, 113340D (18 December 2019); https://doi.org/10.1117/12.2542187
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Cited by 1 scholarly publication.
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KEYWORDS
Semiconductor lasers

Optical lithography

Modulation

Optoelectronics

Optical communications

Optical interconnects

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