The study of the electric field in nBn InAsSb/AlAsSb medium wavelength infrared detectors

Jian Wang; Hong Xia Zhu; Hui Zeng; Xue Yan Yang; Chen Liu; Yan-li Shi

doi:10.1117/12.2540183

18 December 2019 The study of the electric field in nBn InAsSb/AlAsSb medium wavelength infrared detectors

Jian Wang, Hong Xia Zhu, Hui Zeng, Xue Yan Yang, Chen Liu, Yan-li Shi

Proceedings Volume 11338, AOPC 2019: Optical Sensing and Imaging Technology; 1133806 (2019) https://doi.org/10.1117/12.2540183
Event: Applied Optics and Photonics China (AOPC2019), 2019, Beijing, China

Abstract

The nBn barrier medium-wave infrared detector is widely used in the field of night defense vision with internal gain. Due to its low dark current and high reliability. As the existence of its barrier layer suppresses the majority carrier current with a low electric field, the electric field distribution inside the device is one of the important factors affecting its performance. In particular, the electric field distributions of the barrier layer show directly effects on the overall performance of the detector. In this paper, Apsys software is used to simulate the absorption layer and the nBn InAs1-xSbx/AlAs1-ySby mid-wave infrared detector with the factors of thickness, composition and doping changes. and the influence of the above factors on the electric field of the device is also analyzed.

Citation Download Citation

Jian Wang, Hong Xia Zhu, Hui Zeng, Xue Yan Yang, Chen Liu, and Yan-li Shi "The study of the electric field in nBn InAsSb/AlAsSb medium wavelength infrared detectors", Proc. SPIE 11338, AOPC 2019: Optical Sensing and Imaging Technology, 1133806 (18 December 2019); https://doi.org/10.1117/12.2540183

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