Presentation + Paper
13 December 2020 Advanced DePFET concepts: super gq DePFET
A. Bähr, M. Bonholzer, P. Lechner, J. Müller-Seidlitz, J. Ninkovic, R. Richter, F. Schopper, W. Treberspurg, J. Treis
Author Affiliations +
Abstract
The DePFET is an active pixel sensor utilized or suggested for several experiments. For future applications, it is desirable to improve the signal to noise ratio of the DePFET. The DePFET is essentially a pMOSFET built on a high resistive, fully depleted bulk. A deep-n implant beneath the MOS-gate forms a positive potential. Electrons collected in this internal gate modulate the transistors conductivity. This charge gain is influenced by the geometry and operational parameters of the DePFET. To study all influences, we utilized Sentaurus TCAD based simulations to investigate the DePFETs characteristics and compared the results from simulations and measurements. Using the simulations, we studied possible improvements of the DePFET, optimizing its charge gain and noise. From these simulations, it becomes evident, that especially impact ionization poses a problem. We developed an optimized technology that can overcome this limitation.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Bähr, M. Bonholzer, P. Lechner, J. Müller-Seidlitz, J. Ninkovic, R. Richter, F. Schopper, W. Treberspurg, and J. Treis "Advanced DePFET concepts: super gq DePFET", Proc. SPIE 11454, X-Ray, Optical, and Infrared Detectors for Astronomy IX, 114540U (13 December 2020); https://doi.org/10.1117/12.2562484
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KEYWORDS
Field effect transistors

Signal to noise ratio

Ionization

Sensors

Active sensors

Electrons

Modulation

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