Hybrid architectures consisting of two-dimensional materials and conventional semiconductors

Jinkyoung Yoo

doi:10.1117/12.2568603

21 August 2020 Hybrid architectures consisting of two-dimensional materials and conventional semiconductors

Jinkyoung Yoo

Proceedings Volume 11465, Low-Dimensional Materials and Devices 2020; 114650A (2020) https://doi.org/10.1117/12.2568603
Event: SPIE Nanoscience + Engineering, 2020, Online Only

Abstract

Introducing interfaces through heterostructuring is a common strategy to bring novel functionalities and improve device performances. Emerging nanomaterials, of which heterostructuring is under development, can be utilized with combinations of various conventional semiconductors, such as Si, Ge, and compound semiconductors. I’ll present recent achievements of fabrication of hybrid architectures composed of 2D and conventional materials. The experimental approach was epitaxial growth Si, Ge, and ZnO on various 2D materials including graphene, hexagonal boron nitride, transition metal dichalcogenides. Van der Waals and remote epitaxy techniques were employed. Details of nucleation control, charge transfer in hybrid architectures, and insight of device applications will be discussed.

Conference Presentation

Citation Download Citation

Jinkyoung Yoo "Hybrid architectures consisting of two-dimensional materials and conventional semiconductors", Proc. SPIE 11465, Low-Dimensional Materials and Devices 2020, 114650A (21 August 2020); https://doi.org/10.1117/12.2568603

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