A newly designed ArF immersion lightsource, GT66A is required to provide yield improvement on highly complexed multiple-patterning lithography and additional productivity to the chip makers.
The DUV lightsource prospective, EPE needed to be paid attention in order to reduce LER/ LWR, Line Narrowing Module (LNM) demonstrates E95% stability improvement providing further OVL/ CDU improvement. In order to improve tool availability, GT66A key modules including LNM provides up to 50% expected life extension. Therefore, GT66A enables to provide high in availability with improved optical property for EPE enhancement simultaneously.
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