Alternating dual-wavelength second harmonic generation at 532 nm using a Y-branch distributed Bragg reflector diode laser

André Müller; Bernd Sumpf

doi:10.1117/12.2578115

5 March 2021 Alternating dual-wavelength second harmonic generation at 532 nm using a Y-branch distributed Bragg reflector diode laser

André Müller, Bernd Sumpf

Author Affiliations +

Proceedings Volume 11670, Nonlinear Frequency Generation and Conversion: Materials and Devices XX; 116701H (2021) https://doi.org/10.1117/12.2578115
Event: SPIE LASE, 2021, Online Only

Abstract

Alternating dual-wavelength second harmonic generation at 532 nm using a 1064 nm Y-branch distributed Bragg reflector diode laser will be presented. The light source is based on single-pass frequency conversion in a periodically poled lithium niobate waveguide crystal with superimposed poling periods. All components, including the diode laser, optics for beam shaping and the nonlinear crystal, are mounted on a 5 x 25 mm² aluminum nitride micro-optical bench soldered on a 25 x 25 mm² conduction cooled package mount. Separated electrical contacts for the diode laser allow for alternating, wavelength stabilized dual-wavelength laser emission with spectral widths of 0.02 nm (0.2 cm^-1). Heater elements implemented above the DBR gratings enable wavelength tuning, which is utilized for phase-matching at both wavelengths. At a heat sink temperature of 25°C, optical output powers of 5.6 mW at 532.45 nm and 6.7 mW at 531.85 nm with a spectral width of 0.01 nm (0.35 cm^-1) are obtained. The developed light source is suitable for demanding applications such as Raman spectroscopy and shifted excitation Raman difference spectroscopy.

Conference Presentation

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André Müller and Bernd Sumpf "Alternating dual-wavelength second harmonic generation at 532 nm using a Y-branch distributed Bragg reflector diode laser", Proc. SPIE 11670, Nonlinear Frequency Generation and Conversion: Materials and Devices XX, 116701H (5 March 2021); https://doi.org/10.1117/12.2578115

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