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High-temperature AlN homoepitaxial growth up to 1600℃ by HVPE was investigated. High-purity AlN with excellent crystallinity was reported where HVPE-AlN was homoepitaxially grown on the PVT-AlN substrate. However, quartz-derived impurities incorporation was slightly problematic in the HVPE-AlN. In this study, a new reactor was introduced that is a quartz glass reactor including a high-temperature growth zone constructed with heat-resistant materials. O and Si impurity incorporation was reduced with high growth rates of around 150 μm/h by the newly introduced high-temperature growth system.
This work was partially supported by Innovative Science and Technology Initiative for Security Grant Number JPJ004596, ATLA, Japan.
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