Sharp/tuneable UVC selectivity and extreme solar blindness in nominally undoped Ga2O3 MSM photodetectors grown by pulsed laser deposition

D. J. Rogers; A. Courtois; F. H. Teherani; V. E. Sandana; P. Bove; X. Arrateig; L. Damé; P. Maso; M. Meftah; W. El Huni; Y. Sama; H. Bouhnane; S. Gautier; A. Ougazzaden; M. Razeghi

doi:10.1117/12.2596194

24 March 2021 Sharp/tuneable UVC selectivity and extreme solar blindness in nominally undoped Ga₂O₃ MSM photodetectors grown by pulsed laser deposition

D. J. Rogers, A. Courtois, F. H. Teherani, V. E. Sandana, P. Bove, X. Arrateig, L. Damé, P. Maso, M. Meftah, W. El Huni, Y. Sama, H. Bouhnane, S. Gautier, A. Ougazzaden, M. Razeghi

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Proceedings Volume 11687, Oxide-based Materials and Devices XII; 116872D (2021) https://doi.org/10.1117/12.2596194
Event: SPIE OPTO, 2021, Online Only

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Abstract

Ga₂O₃ layers were grown on c-sapphire substrates by pulsed laser deposition. Optical transmission spectra were coherent with a bandgap engineering from 4.9 to 6.2 eV controlled via the growth conditions. X-ray diffraction revealed that the films were mainly β-Ga₂O₃ (monoclinic) with strong (-201) orientation. Metal-Semiconductor-Metal photodetectors based on gold/nickel Inter- Digitated-Transducer structures were fabricated by single-step negative photolithography. 240 nm peak response sensors gave over 2 orders-of-magnitude of separation between dark and light signal with state-of-the-art solar and visible rejection ratios ((I₂₄₀ : I₂₉₀) of > 3 x 10⁵ and (I₂₄₀ : I₄₀₀) of > 2 x 10⁶) and dark signals of <50 pA (at a bias of -5V). Spectral responsivities showed an exceptionally narrow linewidth (16.5 nm) and peak values exhibited a slightly superlinear increase with applied bias up to a value of 6.5 A/W (i.e. a quantum efficiency of > 3000%) at 20V bias.

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D. J. Rogers, A. Courtois, F. H. Teherani, V. E. Sandana, P. Bove, X. Arrateig, L. Damé, P. Maso, M. Meftah, W. El Huni, Y. Sama, H. Bouhnane, S. Gautier, A. Ougazzaden, and M. Razeghi "Sharp/tuneable UVC selectivity and extreme solar blindness in nominally undoped Ga₂O₃ MSM photodetectors grown by pulsed laser deposition", Proc. SPIE 11687, Oxide-based Materials and Devices XII, 116872D (24 March 2021); https://doi.org/10.1117/12.2596194

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