Passive- and self- mode-locking based ultrashort pulse generation in monolithic diode laser at 1550 nm

Ali Alloush; Navina Kleemann; Lukas Braun; Carsten Brenner; Marlene Zander; Wolfgang Rehbein; Martin Moehrle; Martin R. Hofmann

doi:10.1117/12.2583134

5 March 2021 Passive- and self- mode-locking based ultrashort pulse generation in monolithic diode laser at 1550 nm

Ali Alloush, Navina Kleemann, Lukas Braun, Carsten Brenner, Marlene Zander, Wolfgang Rehbein, Martin Moehrle, Martin R. Hofmann

Author Affiliations +

Proceedings Volume 11705, Novel In-Plane Semiconductor Lasers XX; 1170509 (2021) https://doi.org/10.1117/12.2583134
Event: SPIE OPTO, 2021, Online Only

Abstract

In this work, we compare ultrashort pulse generation in a monolithic two-section diode laser chip based on passive- and self- mode-locking (PML and SML) regimes at 1550 nm. In PML, we apply a forward current into the gain segment and a reverse voltage into the absorber segment. For SML operation, both segments are operated by applying a forward current. Strongly chirped pulses with an autocorrelation-width of roughly 7-8 picoseconds are obtained for both cases. We analyze the potential for fiber-based compression of the pulse widths down to the sub-picosecond range.

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Ali Alloush, Navina Kleemann, Lukas Braun, Carsten Brenner, Marlene Zander, Wolfgang Rehbein, Martin Moehrle, and Martin R. Hofmann "Passive- and self- mode-locking based ultrashort pulse generation in monolithic diode laser at 1550 nm", Proc. SPIE 11705, Novel In-Plane Semiconductor Lasers XX, 1170509 (5 March 2021); https://doi.org/10.1117/12.2583134

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