Extended-short-wavelength infrared AlInAsSb and InPAsSb detectors on InAs

J. F. Klem; J. T. Olesberg; S. D. Hawkins; P. H. Weiner; J. Deitz; C. N. Kadlec; E. A. Shaner; W. T. Coon

doi:10.1117/12.2585213

12 April 2021 Extended-short-wavelength infrared AlInAsSb and InPAsSb detectors on InAs

J. F. Klem, J. T. Olesberg, S. D. Hawkins, P. H. Weiner, J. Deitz, C. N. Kadlec, E. A. Shaner, W. T. Coon

Proceedings Volume 11741, Infrared Technology and Applications XLVII; 117410D (2021) https://doi.org/10.1117/12.2585213
Event: SPIE Defense + Commercial Sensing, 2021, Online Only

Abstract

We have fabricated and characterized AlInAsSb- and InPAsSb-absorber nBn infrared detectors with 200 K cutoff wavelengths from 2.55 to 3.25 μm. Minority-carrier lifetimes determined by microwave reflectance measurements were 0.2-1.0 μs in doped n-type absorber materials. Devices having 4 μm thick absorbers exhibited sharp cutoff at wavelengths of 2.9 μm or longer and softer cutoff at shorter wavelengths. Top-illuminated devices with n+ InAs window/contact layers had external quantum efficiencies of 40-50% without anti-reflection coating at 50 mV reverse bias and wavelengths slightly shorter than cutoff. Despite the shallow-etch mesa nBn design, perimeter currents contributed significantly to the 200 K dark current. Dark currents for InPAsSb devices were lower than AlInAsSb devices with similar cutoff wavelengths. For unoptimized InPAsSb devices with 2.55 μm cutoff, 200 K areal and perimeter dark current densities at -0.2 V bias in devices of various sizes were approximately 1x10^-7 A/cm²and 1.4x10^-8 A/cm, respectively.

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J. F. Klem, J. T. Olesberg, S. D. Hawkins, P. H. Weiner, J. Deitz, C. N. Kadlec, E. A. Shaner, and W. T. Coon "Extended-short-wavelength infrared AlInAsSb and InPAsSb detectors on InAs", Proc. SPIE 11741, Infrared Technology and Applications XLVII, 117410D (12 April 2021); https://doi.org/10.1117/12.2585213

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