Optimization of absorption layer in InGaAs/InP uni-traveling carrier photodiode

Sifan Chen; Jun Chen

doi:10.1117/12.2591305

28 February 2021 Optimization of absorption layer in InGaAs/InP uni-traveling carrier photodiode

Sifan Chen, Jun Chen

Proceedings Volume 11781, 4th Optics Young Scientist Summit (OYSS 2020); 117811E (2021) https://doi.org/10.1117/12.2591305
Event: Optics Frontier: Optics Young Scientist Summit, 2020, Ningbo, China

Abstract

In this paper, we build a two-dimensional (2D) simulation model of step doping InGaAs/InP uni-traveling carrier photodiode (UTC-PD) by TCAD and also compare its performance with PIN photodiode (pin-PD). The effect of doping concentration of the step doping absorption layer on the device performance is analyzed. As the doping concentration increases, the saturation photocurrent increases, but the 3-dB bandwidth decreases.

Citation Download Citation

Sifan Chen and Jun Chen "Optimization of absorption layer in InGaAs/InP uni-traveling carrier photodiode", Proc. SPIE 11781, 4th Optics Young Scientist Summit (OYSS 2020), 117811E (28 February 2021); https://doi.org/10.1117/12.2591305

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