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Photonic crystal surface emitting lasers emitting up to 2.6 µm have been designed and fabricated. A high-index-contrast photonic crystal layer was incorporated into the laser heterostructure by air-hole-retaining epitaxial regrowth. Transmission electron microscopy studies demonstrated uniform and continuous regrowth of the nano-patterned GaSb surface with AlGaAsSb alloy until air-pockets start being formed. The photonic crystal surface emitting lasers based on diode laser and cascade diode laser heterostructures generated narrow spectrum low divergence beams with mW-level output power. The angle-resolved electroluminescence analysis demonstrated well resolved photonic subbands corresponding to Γ2 point of square lattice and photonic gaps of several meV.
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Leon Shterengas, R. Liu, G. Kipshidze, A. Stein, Wonjae Lee, Dmitri N Zakharov, Kim Kisslinger, Gregory Belenky, "Electrically pumped epitaxially regrown [lambda] > 2 µm GaSb-based photonic crystal surface-emitting lasers," Proc. SPIE 12021, Novel In-Plane Semiconductor Lasers XXI, 120210B (3 March 2022); https://doi.org/10.1117/12.2615741