Paper
15 February 2022 Laser scanning confocal microscopy observations of InAsSb thin and thick epilayers
Author Affiliations +
Proceedings Volume 12166, Seventh Asia Pacific Conference on Optics Manufacture and 2021 International Forum of Young Scientists on Advanced Optical Manufacturing (APCOM and YSAOM 2021); 1216619 (2022) https://doi.org/10.1117/12.2611065
Event: Seventh Asia Pacific Conference on Optics Manufacture and 2021 International Forum of Young Scientists on Advanced Optical Manufacturing (APCOM and YSAOM 2021), 2021, Hong Kong, Hong Kong
Abstract
InAs0.92Sb0.08 and InAs0.06Sb0.94 epilayers have been grown on InAs substrates by liquid phase epitaxy (LPE) and melt epitaxy (ME) respectively. InAsSb epilayers grown by LPE and ME have been firstly observed by a high temperature laser scanning confocal microscopy (LSCM) . X-ray diffraction (XRD) measurements confirmed that the lattice constant of InAs0.92Sb0.08 epilayers grown by LPE is 6.0912 Å, while that of InAs0.06Sb0.94 epilayers grown by ME is 6.4520 Å. Uncooled photoconductors were fabricated using InAs0.06Sb0.94 thick epilayers grown by ME. The photoresponse wavelength range of InAs0.06Sb0.94 detectorsis 2-10 μm. At 295 K, the peak detectivity Dλp* is 3.59 × 109 cm Hz1/2W-1 at the wavelength of 6.5 μm, and the detectivity D* is 1.0 × 109 , 2.1 × 108 and 1.0 × 108 cm Hz1/2W-1 at 8, 9 and 10 μm for the detectors with Ge immersion lenses respectively
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yu Zhu Gao, Xiu Ying Gong, Zun Tian Chen, Minoru Niigaki, Tadanobu Koyama, and Yasuhiro Hayakawa "Laser scanning confocal microscopy observations of InAsSb thin and thick epilayers", Proc. SPIE 12166, Seventh Asia Pacific Conference on Optics Manufacture and 2021 International Forum of Young Scientists on Advanced Optical Manufacturing (APCOM and YSAOM 2021), 1216619 (15 February 2022); https://doi.org/10.1117/12.2611065
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Liquid phase epitaxy

Confocal microscopy

Indium arsenide antimonide phosphide

Infrared photodetector characterization techniques

Back to Top