Investigation of damage induced by high-power continuous wave laser on SiC-based film

Bingcheng Xiong; Yunti Pu; Junhui Die; Zhao Qiao; Liang Lv; Ping Ma

doi:10.1117/12.2627191

28 March 2022 Investigation of damage induced by high-power continuous wave laser on SiC-based film

Bingcheng Xiong, Yunti Pu, Junhui Die, Zhao Qiao, Liang Lv, Ping Ma

Proceedings Volume 12169, Eighth Symposium on Novel Photoelectronic Detection Technology and Applications; 12169C7 (2022) https://doi.org/10.1117/12.2627191
Event: Eighth Symposium on Novel Photoelectronic Detection Technology and Applications, 2021, Kunming, China

Abstract

Laser damage threshold of optical components is an important indicator to measure the ability of components to resist laser damage. A low-absorption film is plated on the surface of the reaction sintered SiC substrate produced by ion beam sputtering method, and the fundamental frequency reflection efficiency is over 99.8%. A set of 1060 nm continuous laser damage threshold testing system has been established. After loading the SiC-based film sample with a continuous wave laser with a power density of 30 kW/cm2 for 30 s, it was found that the surface temperature rise of the SiC-based film was less than 2 K. the changes of temperature field and thermal stress on the surface of the SiC mirror when the continuous laser loading power and loading time by finite element method. The results are basically consistent with the experimental data. The experimental results verify that the thermal stress and thermal melting effect caused by high-power continuous laser loading are the mechanisms for the damage of mirrors, which provides an idea for improving the laser damage threshold of optical components.

Citation Download Citation

Bingcheng Xiong, Yunti Pu, Junhui Die, Zhao Qiao, Liang Lv, and Ping Ma "Investigation of damage induced by high-power continuous wave laser on SiC-based film", Proc. SPIE 12169, Eighth Symposium on Novel Photoelectronic Detection Technology and Applications, 12169C7 (28 March 2022); https://doi.org/10.1117/12.2627191

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