670-nm transverse-mode stabilized InGaAlP laser diodes

Yutaka Uematsu; Gen-ichi Hatakoshi; Masayuki Ishikawa; Masaki Okajima

doi:10.1117/12.18294

1 May 1990 670-nm transverse-mode stabilized InGaAlP laser diodes

Yutaka Uematsu, Gen-ichi Hatakoshi, Masayuki Ishikawa, Masaki Okajima

Proceedings Volume 1219, Laser Diode Technology and Applications II; (1990) https://doi.org/10.1117/12.18294
Event: OE/LASE '90, 1990, Los Angeles, CA, United States

Abstract

This paper reviews the recent resulis for our transverse-mode stabilized InGaAltP visibite semiconductor lasers. From the material viewpoint, InGaA1P/InGaP heterostructure has disadvantages with respect to the laser operation compared with the GaAlAs/GaAs one. By optimizing the laser structure, we have developed practical usable InGaAlP visible semiconductor lasers of relatively low power levels (<5mw). To extena the application field, though in the development stage, we realized the 670nm high power operation at more than 20mW and the short wavelength cw operation at 638nm.

Citation Download Citation

Yutaka Uematsu, Gen-ichi Hatakoshi, Masayuki Ishikawa, and Masaki Okajima "670-nm transverse-mode stabilized InGaAlP laser diodes", Proc. SPIE 1219, Laser Diode Technology and Applications II, (1 May 1990); https://doi.org/10.1117/12.18294

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