Paper
1 May 1990 Frequency upconversion of semiconductor diode lasers
Wilfried Lenth, William J. Kozlovsky, Roger M. Macfarlane, William P. Risk
Author Affiliations +
Abstract
A number of different techniques have been used for nonlinear frequency upconversion of near-infrared semiconductor diode lasers. Intracavity frequency doubling of a diode-laser-pumped 946-nm Nd:YAG laser led to the generation of 9.5 mW of blue 473-nm power. A special electronic servo technique was devised to lock the output frequency of a single-mode GaAlAs diode laser to a monolithic KNbO3 resonator. Using the approach, 41 mW of 428-nm output were obtained with an electrical-to-optical conversion efficiency of about 10 percent. Strained-layer InGaAs/GaAs diode laser operating at about 1 micron have been fabricated for noncritically phase-matched frequency doubling in KTiOPO4. A 802-nm GaAlAs diode laser was used for upconversion pumping of a YLiF4:Er(3+) laser which operates at 551 nm with a threshold power of 50 mW at 77 K.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wilfried Lenth, William J. Kozlovsky, Roger M. Macfarlane, and William P. Risk "Frequency upconversion of semiconductor diode lasers", Proc. SPIE 1219, Laser Diode Technology and Applications II, (1 May 1990); https://doi.org/10.1117/12.18298
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Cited by 1 scholarly publication.
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KEYWORDS
Semiconductor lasers

Second-harmonic generation

Laser applications

Upconversion

Crystals

Nd:YAG lasers

Laser crystals

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