Paper
26 July 2022 High-power DFB semiconductor laser array
Author Affiliations +
Abstract
We have experimentally demonstrated a 16-wavelength high-power DFB laser array with 200 GHz (1.6 nm) channel spacing based on the asymmetric equivalent π phase shift. Good single-longitudinal-mode (SLM) operations are obtained by introducing asymmetric equivalent π phase shifts. The effect of random phase on the high-reflective (HR) coating facet also is weakened by introducing asymmetric equivalent π phase shifts which are implemented at the 1/5 laser cavity close to the facet with HR coating. The average channel spacing is 1.62 nm, which deviated 0.02 nm from our design under the same injection current (300 mA) of each laser. The output power of 16 channels is above 100 mW at the bias current of 400 mA and the average slope efficiency is 0.41 W/A at 25 °C. Good single-longitudinal-mode are obtained for all the 16 channels with side mode suppression ratios of above 50 dB. Besides, the relative intensity noise at an injection current of 200 mA is below -157 dB/Hz.
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Yuechun Shi, Yuxin Ma, Ziming Hong, Rulei Xiao, Xin Wang, and Xianfei Chen "High-power DFB semiconductor laser array", Proc. SPIE 12278, 2021 International Conference on Optical Instruments and Technology: Optical Communication and Optical Signal Processing, 1227809 (26 July 2022); https://doi.org/10.1117/12.2620155
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KEYWORDS
Phase shifts

High power lasers

Spatial light modulators

Semiconductor lasers

Laser applications

Silicon photonics

Coating

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