Gain-switched Ti:Sapphire microchip laser investigation within 78-300 K temperature range

Martin Fibrich; Jan Šulc; Michal Němec; Helena Jelínková

doi:10.1117/12.2646337

8 March 2023 Gain-switched Ti:Sapphire microchip laser investigation within 78-300 K temperature range

Martin Fibrich, Jan Šulc, Michal Němec, Helena Jelínková

Proceedings Volume 12399, Solid State Lasers XXXII: Technology and Devices; 123990L (2023) https://doi.org/10.1117/12.2646337
Event: SPIE LASE, 2023, San Francisco, California, United States

Conference Poster

Abstract

Influence of temperature on gain-switched Ti:Sapphire laser based on a microchip resonator geometry is investigated. Laser performances are described within 78–300K temperature range. A frequency doubled radiation originating from the diode pumped Yb:YAG/Cr:YAG microchip crystal was used as a pump source, providing 2 ns pulses with a maximum energy of 113 μJ. The best output from gain-switched Ti:Sapphire laser was achieved at cryogenic temperature — 16 μJ of the output energy in 2 ns pulse at ∼746 nm wavelength. The corresponding slope efficiency related to incident pump energy was 16 %. Taking into account the upper estimation of the input energy absorbed in the crystal, the slope efficiency with respect to absorbed pump energy was determined to be 27%.

Citation Download Citation

Martin Fibrich, Jan Šulc, Michal Němec, and Helena Jelínková "Gain-switched Ti:Sapphire microchip laser investigation within 78-300 K temperature range", Proc. SPIE 12399, Solid State Lasers XXXII: Technology and Devices, 123990L (8 March 2023); https://doi.org/10.1117/12.2646337

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