Persistent optical phenomena in oxide semiconductors

Matthew D. McCluskey; Christopher Pansegrau; Syeed E. Ahmed; Macarena Santillan; Jani Jesenovec; John S. McCloy

doi:10.1117/12.2648437

16 March 2023 Persistent optical phenomena in oxide semiconductors

Matthew D. McCluskey, Christopher Pansegrau, Syeed E. Ahmed, Macarena Santillan, Jani Jesenovec, John S. McCloy

Proceedings Volume 12422, Oxide-based Materials and Devices XIV; 1242202 (2023) https://doi.org/10.1117/12.2648437
Event: SPIE OPTO, 2023, San Francisco, California, United States

Abstract

The interaction of transparent oxide semiconductors with light is critically important for a range of applications. Persistent effects could be exploited for holographic memory or optically defined circuits. Conversely, they may also be detrimental to device operation. Large, room-temperature persistent photoconductivity (PPC) was discovered in strontium titanate (SrTiO₃, STO) after annealing in a hydrogen-containing atmosphere. Barium titanate (BaTiO₃, BTO), a ferroelectric material, was recently found to also exhibit PPC. Room-temperature photodarkening was observed in Cu-doped gallium oxide (β-Ga₂O₃) after exposure to sub-bandgap light. Hydrogen is believed to play a central role in these persistent phenomena. In the proposed model, a photon excites substitutional hydrogen (a proton inside an oxygen vacancy), making the defect unstable. The proton leaves and binds to a host oxygen atom, forming an O-H bond that is observed with infrared spectroscopy. An oxygen vacancy is left behind. Because oxygen vacancies in STO and BTO are shallow donors, this process results in PPC. In β-Ga₂O₃:Cu, however, the oxygen vacancy neighbors a Cu acceptor. In that case, photoexcitation results in the rare Cu³⁺ state, which absorbs visible light. The effect can be “erased” by annealing at 300-400°C.

Conference Presentation

Citation Download Citation

Matthew D. McCluskey, Christopher Pansegrau, Syeed E. Ahmed, Macarena Santillan, Jani Jesenovec, and John S. McCloy "Persistent optical phenomena in oxide semiconductors", Proc. SPIE 12422, Oxide-based Materials and Devices XIV, 1242202 (16 March 2023); https://doi.org/10.1117/12.2648437

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available