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ZnO is a fascinating large gap (3.37 eV) semiconductor, which exhibits intrinsically n-type conductive due to its native defects such as zinc interstitials and oxygen vacancies and such n-type related defects tend to compensate the p-type acceptor defects. However, the generation process of p-type defects is more challenging for developing a good quality homojunction optical device. Here we have studied the effect of ex-situ atmospheric annealing on conductivity of ZnO films. The ZnO films were deposited using RF sputtering on Si substrate temperature at 400°C substrate temperature and 2.2E-2 mbar gas pressure. The films were deposited in oxygen-rich ambient to achieve less oxygen vacancy defects in the film. The ex-situ atmospheric annealing is performed at higher temperature of 900 and 1000ºC. The effects of this postdeposition annealing on the electrical, structural, elemental and optical properties of ZnO thin films were investigated in detail. The X-ray Diffraction (XRD) results exhibited the hexagonal wurtzite structure (002) orientation. After annealing, the XRD peak is shifted at higher 2-thetha value, which indicates a reduction in lattice constant. Further, X-ray photoelectron spectroscopy (XPS) had been done and such XPS results confirmed that simultaneous generation of acceptor defects and reduction of oxygen vacancy related donor concentrations. The electrical properties of films were studied using hall measurement system. These electrical parameters were purposive to inspect the effect of ex-situ atmospheric annealing temperatures on conductivity of films. The Hall measurement confirmed that 1000ºC annealed films achieve p-type conductivity with high reproducibility and such p-type behavior exhibits high mobility. Thus, temperature induced conductivity reversal could be a potential and cost-effective technique to achieve highly stable p-type ZnO films.
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