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We present a strain engineering platform that allows the dynamic tuning of the emission wavelength of a monolayer WSe2. A large and localized strain was induced in monolayer 2D materials by patterning a photoresist layer with internal stress into two elliptical shapes with a finite gap in between, which is referred to as a dimer in this work. By applying laser annealing on the dimer stressor while monitoring the exciton emission, we demonstrate the capability to dynamically tune the emission wavelength of the bright exciton in the monolayer WSe2.
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